Old radios often had selenium rectifiers to convert AC to DC. The problem is that the old units, dating back to 1933, are prone to failure and to release dangerous chemicals like hydrogen selenide. [M Caldeira] has a new board made to fit a particular rectifier and also allows a varying voltage drop. The circuit consists of a few diodes, a MOSFET, and a pot for adjusting the voltage drop. An IRF840 MOSFET provides the adjustment.

Did it work? It did. The good news is that if it fails — which shouldn’t happen very often — it won’t release stinky and noxious fumes

We wondered if he should 3D print a fake case to make it look more the part. If you haven’t seen a real selenium rectifier, they were made of stacks of metal plates coated with bismuth or nickel. Then, a film of doped selenium was annealed to the surface to form cadmium selenide. Each plate could handle about 20 V and the more plates you used, the more reverse voltage the device could withstand.

Selenium was also found in old photocells. If you fancy replacing other parts of an old radio, you might consider a faux magic eye or even one of the main tubes.

These days, it’s super-easy to jump onto the World Wide Web to find purported replacement parts using nothing but the part identifier, whether it’s from a reputable source like Digikey or Mouser or from more general digital fleamarkets like eBay and AliExpress. It’s hardly a secret that many of the parts you can buy online via fleamarkets are not genuine. That is, the printed details on the package do not match the actual die inside. After AliExpress-sourced MOSFETs blew in a power supply repair by [Learn Electronics Repair], he first tried to give the MOSFETs the benefit of the doubt. Using an incandescent lightbulb as a current limiter, he analyzed the entire PSU circuit before putting the blame on the MOSFETs (IRFP460) and ordering new ones from LCSC.

Buying from a distributor instead of a marketplace means you can be sure the parts are from the manufacturer. This means that when a part says it is a MOSFET with specific parameters, it almost certainly is. A quick component tester session showed the gate threshold of the LCSC-sourced MOSFETs to be around 3.36V, while that of the AliExpress ‘IRFP460’ parts was a hair above 1.8V, giving a solid clue that whatever is inside the AliExpress-sourced MOSFETs is not what the package says it should be.

Unsurprisingly, after fitting the PSU with the two LCSC-sourced MOSFETs, there was no more magic smoke, and the PSU now works. The lesson here is to be careful buying parts of unknown provenance unless you like magic smoke and chasing weird bugs.

We don’t know how you feel when designing hardware, but we get uncomfortable at the extremes. High voltage or current, low noise figures, or extreme frequencies make us nervous.  [Orion Serup] from CrabLabs has been turning up a few of those variables and has created a fairly beefy 3-phase motor driver using GaN technology that can operate up to 80V at 70A. GaN semiconductors are a newer technology that enables greater power handling in smaller packages than seems possible, thanks to high electron mobility and thermal conductivity in the material compared to silicon.

The KiCAD schematic shows a typical high-power driver configuration, broken down into a gate pre-driver, the driver itself, and the following current and voltage sense sub-circuits. As is typical with high-power drivers, these operate in a half-bridge configuration with identical N-channel GaN transistors (specifically part EPC2361) driven by dedicated gate drivers (that’s the pre-driver bit) to feed enough current into the device to enable it to switch quickly and reliably.

The design uses the LM1025 low-side driver chip for this task, as you’d be hard-pushed to drive a GaN transistor with discrete components! You may be surprised that the half-bridge driver uses a pair of N-channel devices, not a symmetric P and N arrangement, as you might use to drive a low-power DC motor. This is simply because, at these power levels, P-channel devices are a rarity.

Why are P-channel devices rare? N-channel devices utilise electrons as the majority charge carrier, but P-channel devices utilise holes, and the mobility of holes in GaN is very low compared to that of electrons, resulting in much worse ON-resistance in a P-channel and, as a consequence, limited performance. That’s why you rarely see P-channel devices in a circuit like this.

Of course, schematic details are only part of the problem. High-power design at the PCB level also requires careful consideration. As seen from the project images, this involves heavy, thick copper traces on two or more heavily via-stitched layers to maximise copper volume and lower resistance as far as possible.  But, you can overdo this and end up with too much inductance in critical areas, quickly killing many high-power devices. Another vital area is the footprint design for the GaN device and how it connects to the rest of the circuit. Get this wrong or mess up the soldering, and you can quickly end up with a much worse performance!

We’ve seen DIY high-power controllers here a few times. Here’s an EV controller that uses discrete power modules. Another design we saw a few years ago drives IGBTs for a power output of 90kW.